Silicon carbide semiconductor device having halogen field limiting ring regions and method of manufacturing same
US10714571B2 · kind B2 · utility
1Cited by
8References
9Claims
0Family size
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Key dates
| Filing date | May 19, 2017 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | May 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor layer having n-type is made of silicon carbide, and has an element region and a terminal region. A plurality of field limiting ring regions having p-type are provided in the terminal region of the semiconductor layer, and are arranged spaced apart from one another. A field insulating film is provided in the terminal region of the semiconductor layer, and is in contact with the field limiting ring regions and the semiconductor layer. Each of the field limiting regions includes a halogen-containing field limiting ring part in contact with the field insulating film and containing halogen family atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.