Shielded trench devices
US10714574B2 · kind B2 · utility
3Cited by
18References
35Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 25, 2019 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Mar 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A shield trench power device such as a trench MOSFET or IGBT employs a gate structure with an underlying polysilicon shield region that contacts a shield region in an epitaxial or crystalline layer of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.