Quantum dot devices with multiple dielectrics around fins

US10714604B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Hubert C. George · Portland, US
• David J. Michalak · Portland, US
• Ravi Pillarisetty · Portland, US
• Lester Lampert · Portland, US
• James S. Clarke · Portland, US
• Zachary R. Yoscovits · Beaverton, US
• Nicole K. Thomas · Portland, US
• Roman Caudillo · Portland, US
• Kanwaljit Singh · Rotterdam, NL
• Jeanette M. Roberts · North Plains, US

Key dates

• Filing date: Jun 25, 2018
• Grant date: Jul 14, 2020
• Expiry date: Jun 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0151
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; a first dielectric material around a bottom portion of the fin; and a second dielectric material around a top portion of the fin, wherein the second dielectric material is different from the first dielectric material.