Solid-state neutron detector
US10714651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2018 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/953
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.