Methods of forming interdigitated back contact layers

US10714652B2 · kind B2 · utility

Assignee

• Alliance for Sustainable Energy, LLC · US

Inventors

• William Nemeth · Wheat Ridge, US
• Pauls Stradins · Golden, US
• Vincenzo Anthony LaSalvia · Conifer, US
• Matthew R. Page · Littleton, US
• David L. Young · Golden, US

Key dates

• Filing date: Jun 21, 2018
• Grant date: Jul 14, 2020
• Expiry date: Jun 21, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.