CMOS wideband RF amplifier with gain roll-off compensation for external parasitics
US10715087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2016 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Nov 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to an integrated wideband Radio Frequency (RF) amplifier, based on a complementary metal oxide semiconductor (CMOS) technology. In an embodiment the amplifier addresses the shortcomings of conventional wideband amplifiers and is based on a distributed amplifier (DA) topology which typically exhibit severe performance degradation when externally loaded with parasitic circuit elements. In an embodiment of the present invention a buffer amplifier at the output of a conventional DA is able to compensate the impact of parasitic elements. The disclosed circuit can be implemented by fabricating the wideband RF amplifier integrated circuit (IC) on a 130 nm CMOS technology or other comparable CMOS technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.