Magneto-resistive effect element
US10718828B2 · kind B2 · utility
1Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Aug 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magneto-resistive effect element includes a magnetization free layer, an intermediate layer, and a magnetization pinned layer. The magnetization free layer extends along a first plane. The intermediate layer extends along the first plane, and is stacked on the magnetization free layer. The magnetization pinned layer extends along the first plane, and is provided on side opposite to the magnetization free layer with the intermediate layer being interposed therebetween. Here, the magnetization free layer includes an end surface that has a maximum inclination angle of 42° or less relative to the first plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.