Photo mask and method of manufacturing semiconductor element using photo mask
US10719009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photo mask includes a transparent substrate, a transflective member, and a light shielding member. The transparent substrate has a transflective region including a first region, a second region located in opposing lateral portions of the first region, and an edge region located adjacent to the first and second regions, and a light shielding region surrounding the transflective region. The transflective member is disposed in the first, second and edge regions under the transparent substrate, and has a different light transmittance in each of the first, second and edge regions. The light shielding member is disposed in the light shielding region under the transparent substrate, and defines an opening which exposes the transflective region. The light shielding member includes a long side extending in a first direction parallel to an upper surface of the transparent substrate and a short side extending in a second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.