Semiconductor device and manufacturing method thereof
US10720362B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Dec 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a semiconductor fin, a first source/drain feature, a second source/drain feature, and a dielectric plug. The first source/drain feature adjoins the semiconductor fin. The second source/drain feature adjoins the semiconductor fin. The dielectric plug extends from above the semiconductor fin into the semiconductor fin, the dielectric plug is between the first source/drain feature and the second source/drain feature. The dielectric plug includes a waist and a first portion below the waist, and a width of the waist is less than a width of the first portion of the dielectric plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.