Semiconductor device structure and method of manufacture
US10720498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Nov 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to a semiconductor device structure and method of manufacturing a semiconductor device. The semiconductor device structure comprises a semiconductor substrate having an edge region laterally separated from a device region; an edge termination structure arranged on the semiconductor substrate; wherein the edge termination structure comprises: a first oxide layer arranged on the substrate to extend from the active region to the edge region; an isolation layer arranged on top of the first oxide layer; and a metal layer arranged to at least partially cover the isolation layer and wherein the metal layer is further arranged to extend from the isolation layer to contact the edge region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.