Transistor device with a field electrode that includes two layers
US10720500B2 · kind B2 · utility
3Cited by
8References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 8, 2019 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Feb 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes first and second layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.