Product method of thin-film transistor, thin-film transistor, display apparatus, and fingerprint recognition unit
US10720512B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Oct 25, 2017 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Jul 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This disclosure discloses a production method of a thin-film transistor, a thin-film transistor, a display apparatus, and a fingerprint recognition unit. Said method comprises the steps of: sequentially depositing a metal layer and an indium zinc oxide layer as a protective layer on a substrate; etching the metal layer and the indium zinc oxide layer to form a first electrode and a second electrode of a photosensitive device; and forming a photoelectric semiconductor of the photosensitive device on the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.