Thin film transistor and method for manufacturing the same, array substrate and display device
US10720531B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor includes a gate, an active layer, a source, a drain. The source includes a connecting portion, a first sub-portion, a second sub-portion, and a third sub-portion that are arranged sequentially and in parallel. At first ends of the sub-portions, the connecting portion is connected to the portions to form two adjacent recesses. At second ends of the sub-portions, the distance from an end of the second sub-portion to the connecting portion is smaller than a distance from an end of the first sub-portion to the connecting portion and a distance from an end of the third sub-portion to the connecting portion. The drain includes a connecting block, a first drain and a second drain disposed in the two recesses respectively, and at least a portion of the connecting block is disposed between the first and the second drains to connect the first and the second drains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.