Light emitting diode and method of fabricating the same

US10720550B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Cheng Meng · Xiamen, CN
• Chun-Yi Wu · New Taipei, TW
• Shufan Yang · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Sep 22, 2018
• Grant date: Jul 21, 2020
• Expiry date: Sep 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A method of fabricating an LED includes: providing an epitaxial structure having a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; forming an extended electrode and performing thermal treatment to form ohmic contact with the second-type semiconductor layer; providing a temporary substrate bonded with the epitaxial structure, and removing the growth substrate to expose the surface of the first-type semiconductor layer; forming an ohmic contact layer, a mirror layer and a bonding layer over the exposed surface of the first-type semiconductor layer; providing a conductive substrate bonded with the bonding layer, and removing the temporary substrate to expose part of the surface of the second-type semiconductor layer and the extended electrode; forming a roughening surface via etching of the exposed second-type semiconductor layer; and providing a bonding wire electrode forming a closed loop with the extended electrode.