Magnetic sensor using spin hall effect

US10720570B2 · kind B2 · utility

Assignee

• Western Digital Technologies, Inc. · US

Inventors

• Quang Le · San Jose, US
• David J. Seagle · معلمی نژاد, US
• Xiaoyong Liu · San Jose, US
• Daniele Mauri · San Jose, US
• Yongchul Ahn · San Jose, US
• Hongquan Jiang · Madison, US
• Guangli Liu · Pleasanton, US
• David Druist · Santa Clara, US
• Jui-Lung Li · San Jose, US

Key dates

• Filing date: Nov 29, 2017
• Grant date: Jul 21, 2020
• Expiry date: Nov 29, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/18
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.