Patent · US Active

Semiconductor device and semiconductor package

US10720914B1 · kind B1 · utility

6Cited by
4References
14Claims
0Family size

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Key dates

Filing dateSep 6, 2019
Grant dateJul 21, 2020
Priority date
Expiry dateSep 6, 2039

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02B70/10
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a normally-off transistor which comprises a first source, a first drain, and a first gate, a normally-on transistor which comprises a second source connected electrically to the first drain, a second drain, and a second gate, a gate drive circuit which drives the first gate and the second gate, a first resistor which is connected between an output node of the gate drive circuit and the first gate, a second resistor and a first capacitor which are connected in series between the output node and the second gate, a first rectifier element which comprises a first anode and a first cathode, a second rectifier element which comprises a second anode and a second cathode, a first inductor, a second inductor, and a second capacitor and a third inductor which are connected in series between the first source and the second source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.