Patent · US Active

Photonic transmitter

US10725324B2 · kind B2 · utility

3Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 22, 2019
Grant dateJul 28, 2020
Priority date
Expiry dateJul 22, 2039

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2203/50
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 μm, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.