Photonic transmitter
US10725324B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2019 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jul 22, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 μm, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.