Mask process aware calibration using mask pattern fidelity inspections
US10725454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jan 23, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Techniques for modifying a mask fabrication process based the identification of an abnormality in a pattern of a fabricated lithography mask are disclosed including comparing a fabricated lithography mask to a lithography mask design where the fabricated lithography mask is fabricated based at least in part on the lithography mask design using a mask fabrication process. An abnormality in a pattern of the fabricated lithography mask relative to a corresponding one of the plurality of patterns in the lithography mask design is identified based at least in part on the comparison of the fabricated lithography mask to the lithography mask design. A calibrated mask model is generated based at least in part on the identified abnormality in the pattern of the fabricated lithography mask and the mask fabrication process is modified based at least in part on the calibrated mask model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.