Method for writing in a non-volatile memory of an electronic entity, and related electronic entity
US10725935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2016 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/1052
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for writing in a non-volatile memory of an electronic entity, the method including the following steps: determining an operational state of the electronic entity; writing a first datum in a first area of the non-volatile memory in case of abnormal operation; writing a second datum in a second area of the non-volatile memory in case of normal operation. The method includes a step for randomly determining a location for the second area from among a plurality of locations for the second area, the writing of the datum in the second area being carried out in the determined location. Also disclosed is a related electronic entity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.