Semiconductive shield free of weld lines and protrusions

US10726976B2 · kind B2 · utility

Assignee

• DOW GLOBAL TECHNOLOGIES LLC · US

Inventors

• Xiaomei Song · Shanghai, CN
• Hongyu Chen · Beijing, CN
• Yabin Sun · Shanghai, CN
• Youjun Wu · Shanghai, CN
• Wei Li · Kunshan, CN
• Xiaoxiong Miao · Shanghai, CN

Key dates

• Filing date: Jun 30, 2016
• Grant date: Jul 28, 2020
• Expiry date: Jun 30, 2036

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C08L2205/02
• WIPO field: Macromolecular chemistry, polymers
• WIPO sector: Chemistry

Abstract

Semiconductive shield layers for power cable constructions are made from a composition that has: (A) A nonpolar, ethylene-based polymer having a density of greater than (>) 0.90 glee and a melt index of >20 g/10 min at 190° C./2.16 Kg; (B) A polar polymer consisting of ethylene and an unsaturated alkyl ester having 4 to 20 carbon atoms; (C) Acetylene carbon black; and (D) A curing agent; with the provisos that (1) the composition has a phase separated structure, and (2) the weight ratio of nonpolar polymer to polar polymer is from 0.25 to 4.