Power semiconductor device
US10727186B2 · kind B2 · utility
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1References
14Claims
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Assignee
Inventors
Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jul 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device having a high degree of reliability even when an operable temperature of a power semiconductor element is sufficiently increased. The power semiconductor device includes: a power semiconductor element including an electrode formed on a first surface; a first stress mitigation portion connected to the electrode with a first bonding portion being interposed; and a wiring portion electrically connected to the first stress mitigation portion with a second bonding portion being interposed. A bonding strength of the first bonding portion is higher than a bonding strength of the second bonding portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.