Semiconductor device and semiconductor element with improved yield
US10727209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | May 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor element, a first element insulating part, and an insulating sealing member. The first semiconductor element includes a first semiconductor chip and a first chip electrode electrically connected to the first semiconductor chip. The first semiconductor chip has a first surface crossing a first direction, a second surface crossing the first direction and distant from the first surface, and a third surface between the first and second surfaces. The first chip electrode is disposed on the first surface. The first element insulating part includes a first portion and a second portion continuous to the first portion. The insulating sealing member includes a third portion and a fourth portion continuous to the third portion. The first portion is between the first surface and the third portion, and the second portion is between the third surface and the fourth portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.