IGBT semiconductor device

US10727225B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• Toshiba Electronic Devices & Storage Corporation · JP

Inventor

• Ryohei GEJO · Kawasaki, JP

Key dates

• Filing date: Jul 9, 2018
• Grant date: Jul 28, 2020
• Expiry date: Oct 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a gate electrode, a fifth semiconductor region, a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, and a second electrode. The first semiconductor region is provided on the first electrode. The eighth semiconductor region surrounds the third semiconductor region, the sixth semiconductor region, and the seventh semiconductor region. The eighth semiconductor region includes a first region and a second region respectively arranged with the third semiconductor region and the seventh semiconductor region in a third direction. A lower end of the second region is positioned higher than a lower end of the first region.