Heterogeneously integrated semiconductor device and manufacturing method thereof
US10727231B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Oct 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
Abstract
A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.