Semiconductor device and manufacturing method thereof
US10727300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jan 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, includes a first conductive type first doping area, a second conductive type second doping area, a source region, a drain region, a gate insulating film, and a gate electrode. The first conductive type first doping area is formed in a substrate region. The second conductive type second doping area is formed in the substrate to be spaced apart from the first conductive type first doping area. The source region is formed in the first conductive type first doping area. The drain region is formed in the second conductive type second doping area. The gate insulating film is formed between the source region and the drain region. A thickness of a first end of the gate insulating film is different than a thickness of a second end of the gate insulating film. The gate electrode formed on the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.