Photoelectric conversion device and method for manufacturing same
US10727360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2019 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Sep 4, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device includes a semiconductor substrate having a first conductivity-type region, a second conductivity-type region, and a boundary region on a first principal surface of a semiconductor substrate, the boundary region being in contact with and separating the first conductivity-type region and the second conductivity-type region, the method including: stacking a second conductivity-type semiconductor layer over the second conductivity-type region and the boundary region on the first principal surface of the semiconductor substrate; stacking an insulating layer over the second conductivity-type semiconductor layer in the boundary region; stacking a first conductivity-type semiconductor layer over the first conductivity-type region on the first principal surface of the semiconductor substrate and on the insulating layer; stacking an electrode layer on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and forming a separation groove that separates the electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.