Thin film transistor, method of manufacturing the same, and electronic device including the same
US10727426B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Dec 20, 2016 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Dec 20, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A thin film transistor includes a gate electrode, an organic semiconductor overlapping the gate electrode, an insulator between the gate electrode and the organic semiconductor, and a source electrode and a drain electrode electrically connected to the organic semiconductor, respectively. The organic semiconductor is capable of being applied by a solution process, the insulator includes an inorganic insulating layer having a surface facing the organic semiconductor, and the surface includes a coating with a polysiloxane having an acrylic terminal group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.