Bulk acoustic wave resonator with multilayer piezoelectric structure
US10727809B2 · kind B2 · utility
5Cited by
4References
25Claims
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Key dates
| Filing date | Nov 29, 2017 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/589
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) resonator has a bottom electrode, a top electrode over the bottom electrode, and a multilayer piezoelectric structure between the bottom electrode and the top electrode. The multilayer piezoelectric structure has a first piezoelectric layer having a first electromechanical coupling coefficient and a second piezoelectric layer having a second electromechanical coupling coefficient that is different than the first electromechanical coupling coefficient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.