Thin film transistor substrate and display device using the same
US10732475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A display device is disclosed, which includes: a first substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer; a first insulating layer disposed under the first semiconductor layer; and a buffer layer disposed between the first substrate and the first insulating layer, wherein a thickness of the first insulating layer is greater than a thickness of the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.