Patent · US Active

Mirror blank for EUV lithography without expansion under EUV radiation

US10732519B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

HERAEUS QUARZGLAS GMBH & CO. KG · DE

Inventors

Klaus Becker · Hanau, DE
Stephan Thomas · Großkrotzenburg, DE

Key dates

Filing date	Sep 10, 2014
Grant date	Aug 4, 2020
Priority date	—
Expiry date	Sep 10, 2034

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC03C2201/42
WIPO fieldOther special machines
WIPO sectorMechanical engineering

Abstract

A substrate for an EUV mirror which contains a zero crossing temperature profile that departs from the statistical distribution is provided. A method for producing a substrate for an EUV mirror is also provided, in which the zero crossing temperature profile in the substrate is adapted to the operating temperature of the mirror. A lithography method using the substrate is also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.