Magnetic memory device
US10734051B2 · kind B2 · utility
0Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2019 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Oct 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.