Buffered spin-torque sensing device for global interconnect circuits
US10734052B2 · kind B2 · utility
2Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Oct 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A bit cell driving mechanism is disclosed. The mechanism includes a bit cell which includes a first magnetic tunnel junction (MTJ) cell, including a pinned layer, a non-magnetic layer, a free layer having two magnetic regions separated by a laterally moveable domain wall, and a spin-hall metal layer configured to receive an electrical current therethrough which causes the DW to move laterally. The mechanism also includes a second MTJ cell coupled to the first MTJ cell as well as an interconnect driver configured to provide electrical current to the first MTJ cell during a write operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.