Spectrally and temporally engineered processing using photoelectrochemistry
US10734237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | May 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30617
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.