Nonvolatile memory devices comprising a conductive line comprising portions having different profiles and methods of fabricating the same
US10734403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Jun 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.