Pad structure for backside illuminated (BSI) image sensors

US10734429B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ching-Hung Cheng · Baoshan, TW
• Kai-Fung Chang · Taipei, TW

Key dates

• Filing date: Aug 6, 2018
• Grant date: Aug 4, 2020
• Expiry date: Sep 29, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/05

Abstract

A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.