Light emitting diode apparatus and manufacturing method thereof
US10734544B2 · kind B2 · utility
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5References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 11, 2019 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Mar 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode (LED) apparatus is provided. The LED apparatus includes a light emitting diode, a light conversion layer stacked on the light emitting diode and configured to convert a wavelength of light incident from the light emitting diode, a reflection coating layer stacked on the light conversion layer and configured to pass the light of which the wavelength is converted in light incident from the light conversion layer therethrough and reflecting the other light, and a color filter stacked on the reflection coating layer and configured to correspond to the light conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.