Light emitting diode
US10734551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2019 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Oct 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.