Bonding wire for semiconductor device
US10737356B2 · kind B2 · utility
1Cited by
9References
9Claims
0Family size
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Key dates
| Filing date | Jun 14, 2016 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Jun 14, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6: Strength ratio=ultimate strength/0.2% offset yield strength. (1)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.