Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof
US10738394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2017 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses a molecular beam epitaxy under vector strong magnetic field and an in-situ characterization apparatus thereof. The apparatus mainly consists of an inverted T-shaped ultrahigh vacuum growth and characterization chamber with a compact structure and a strong magnet. The inverted T-shaped vacuum chamber portion, which disposed in the room-temperature chamber of the strong magnet, includes a compact epitaxial growth sample stage, a device capable of rotating angle between the growth and magnetic field directions, and an in-situ characterization apparatus. The portion disposed below the strong magnet includes a molecular beam source component such as evaporation source, plasma source etc., and a vacuum-pumping system. The present invention surmounts effectively the technical problems between the small volume of the strong magnetic field chamber and numerous components of the growth and test system, and realizes the molecular beam epitaxial growth and in-situ characterization under the strong magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.