Patent · US Active

Current-induced dark layer formation for metallization in electronic devices

US10739879B2 · kind B2 · utility

2Cited by
1References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 2018
Grant dateAug 11, 2020
Priority date—
Expiry dateJan 18, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2203/04103
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.