Method for manufacturing semiconductor device
US10741395B2 · kind B2 · utility
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1References
11Claims
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Assignee
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Key dates
| Filing date | Feb 12, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Jun 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include performing a first heat treatment of a first film at a first temperature not less than 500° C. and not more than 900° C. in a first atmosphere including oxygen. The first film includes silicon and oxygen and is deposited on a semiconductor member including silicon carbide. The method can include performing, after the first heat treatment, a second heat treatment of the first film at a second temperature not less than 1200° C. but less than 1400° C. in a second atmosphere including nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.