Method of singulating semiconductor die and method of fabricating semiconductor package
US10741448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2019 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Mar 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor package includes providing a substrate on a stage, the substrate including semiconductor dies and a modified layer along a partition lane and sequentially having an adhesive film and a base film on a surface thereof so that bottom surfaces of the adhesive film and the base film face the stage and top surfaces of the adhesive film and the base film face away from the stage and the bottom surface of the adhesive film faces the top surface of the base film; separating the semiconductor dies from each other by applying a force to the substrate in a lateral direction; applying a gas pressure to a top surface of each of the semiconductor dies; and irradiating ultraviolet rays toward the adhesive film after applying the gas pressure on the top surface of each of the semiconductor dies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.