Semiconductor devices and methods of forming the same
US10741477B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | May 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/3213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.