Image sensor and method for manufacturing image sensor
US10741603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Aug 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
Abstract
A method for manufacturing an image sensor comprises: forming a trench around a photodiode, wherein the photodiode comprises a first doped region with a first conductivity type dopant formed in a semiconductor substrate with a second conductivity type dopant; forming a covering portion in the trench, the covering portion with the second conductivity type dopant covering at least a portion of a sidewall or a bottom wall of the trench, wherein a doping concentration of the covering portion is higher than a doping concentration of the semiconductor substrate; and diffusing the second conductivity type dopant in the covering portion into the semiconductor substrate so as to form a second doped region with the second conductivity type dopant surrounding the at least a portion of the sidewall or the bottom wall of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.