High mobility doped metal oxide thin films and reactive physical vapor deposition methods of fabricating the same
US10741649B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | May 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.