IGBT with improved terminal and manufacturing method thereof
US10741651B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Feb 8, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Feb 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/817
Abstract
A terminal structure of an insulated gate bipolar transistor (IGBT) device includes a main junction, a cutoff ring, and a plurality of terminal rings disposed between the main junction and the cutoff ring, and a resistive element having a first terminal electrically connected to the main junction, a second terminal electrically connected to the cutoff ring, and a plurality of intermediate terminals electrically connected to the terminal rings, respectively. The resistive element is configured to uniformly distribute the lateral voltage between the main junction and the cutoff ring to the terminal rings to ensure that the peak electric field is uniformly distributed across the terminal structure, thereby reducing the terminal structure area and package cost of the IGBT device, while improving the device reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.