Semiconductor laser and semiconductor laser arrangement

US10741996B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Frank Singer · Regenstauf, DE
• Norwin von Malm · Nittendorf, DE
• Tilman Ruegheimer · Regensburg, DE
• Thomas Kippes · Dresden, DE

Key dates

• Filing date: Sep 29, 2016
• Grant date: Aug 11, 2020
• Expiry date: Sep 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/176
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1). The contact surfaces (61, 63) are oriented parallel to a growth direction (G) of the semiconductor layer sequence (2). The semiconductor laser (1) can be surface-mounted without wires.