Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
US10742174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Dec 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of RF amplifiers and RF amplifier devices include a transistor, a multiple-section bandpass filter circuit, and a harmonic termination circuit. The bandpass filter circuit includes a first connection node coupled to the amplifier input, a first inductive element coupled between the first connection node and a ground reference node, a first capacitance coupled between the first connection node and a second connection node, a second capacitance coupled between the second connection node and the ground reference node, and a second inductive element coupled between the second connection node and the transistor input. The harmonic termination circuit includes a third inductive element and a third capacitance connected in series between the transistor input and the ground reference node. The harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.