Broadband power transistor devices and amplifiers and methods of manufacture thereof
US10742178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | May 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/387
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an output impedance matching circuit, and a harmonic termination circuit. The impedance matching circuit includes a harmonic termination circuit, which includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. An equivalent capacitance from a combination of the first inductive element and the first capacitance in series effectively increases the drain-source capacitance by at least 10 percent. The impedance matching circuit also includes a second inductance (a second plurality of bondwires) and a second capacitance coupled in series between the transistor output and the ground reference node, where the second inductance and the second capacitance are directly connected. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.