Actuator layer patterning with topography
US10745270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Jun 13, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/036
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.